Datasheet4U Logo Datasheet4U.com

FDC8602 - Dual N-Channel Shielded Gate PowerTrench MOSFET

Description

This N-Channel MOSFET advanced is produced using Fairchild that Semiconductor‘s PowerTrench® process Shielded Gate MOSFET Technology Max rDS(on) = 350 mΩ at VGS = 10 V, ID = 1.2 A Max rDS(on) = 575 mΩ at VGS = 6 V, ID = 0.9 A High performance trench technolog

Features

  • General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDC8602 Dual N-Channel MOSFET ON Semiconductor
FDC8601 N-Channel MOSFET ON Semiconductor
FDC8601 N-Channel 100V MOSFET VBsemi
FDC86244 N-Channel MOSFET ON Semiconductor
FDC-xx EMC Filters - Single-Phase Filters - FD/FDC/FDV IEC Connector Filter Premo

Other Datasheets by Fairchild (onsemi)

Part Number Description
FDC8601 N-Channel Shielded Gate PowerTrench MOSFET
FDC86244 N-Channel Power Trench MOSFET
FDC855N Single N-Channel PowerTrench MOSFET
FDC8878 N-Channel MOSFET
FDC8884 N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
FDC8602 Dual N-Channel Shielded Gate PowerTrench® MOSFET May 2013 FDC8602 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 1.2 A, 350 mΩ Features General Description This N-Channel MOSFET advanced is produced using Fairchild that Semiconductor‘s PowerTrench® process „ Shielded Gate MOSFET Technology „ Max rDS(on) = 350 mΩ at VGS = 10 V, ID = 1.2 A „ Max rDS(on) = 575 mΩ at VGS = 6 V, ID = 0.9 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Fast switching speed „ 100% UIL Tested „ RoHS Compliant incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
Published: |